activity
20112017
most citedThickness-independent transport channels in topological insulator Bi2Se3 thin films

364 citations · 1.5k across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2017★ 351 cited

Bright visible light emission from graphene

Young Duck Kim, Hakseong Kim, Yujin Cho +18

Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter inter…

cond-mat.mtrl-sci2013★ 75 cited

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Sahng-Kyoon Jerng, Kisu Joo, Youngwook Kim +7

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth…

cond-mat.mes-hall2012★ 109 cited

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

Yong Seung Kim, Jae Hong Lee, Young Duck Kim +8

A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species a…

cond-mat.mtrl-sci2011★ 81 cited

Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

Matthew Brahlek, Yong Seung Kim, Namrata Bansal +2

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi…

cond-mat.mtrl-sci2011★ 309 cited

Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3

Yong Seung Kim, Matthew Brahlek, Namrata Bansal +7

We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170…

cond-mat.mtrl-sci2011★ 217 cited

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Namrata Bansal, Yong Seung Kim, Eliav Edrey +10

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve inter…

cond-mat.mtrl-sci2011★ 364 cited

Thickness-independent transport channels in topological insulator Bi2Se3 thin films

Namrata Bansal, Yong Seung Kim, Matthew Brahlek +2

With high quality topological insulator (TI) Bi2Se3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally cons…