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20112025
most citedMn Solid Solutions in Self-Assembled Ge/Si (001) Quantum Dot Heterostructures

10 citations · 23 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2025

High thermoelectric power factor in Ni-Fe alloy for active cooling applications

Shuai Li, Sree Sourav Das, Haobo Wang +5

Metallic thermoelectric materials are promising candidates for active cooling applications, where high thermal conductivity and a high thermoelectric power factor are essential to…

cond-mat.mtrl-sci2016★ 6 cited

3D Nanostructures on Ge/Si(100) Wetting Layers: Hillocks and Pre-Quantum Dots

Gopalakrishnan Ramalingam, Jerrold A. Floro, Petra Reinke

The annealing of sub-critical Ge wetting layers (WL<3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus dir…

cond-mat.mtrl-sci2012★ 10 cited

Mn Solid Solutions in Self-Assembled Ge/Si (001) Quantum Dot Heterostructures

Joseph Kassim, Christopher Nolph, Matthieu Jamet +2

Heteroepitaxial Ge0.98Mn0.02 quantum dots on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicato…

cond-mat.mtrl-sci2012★ 1 cited

Surface Driven Mn-Doping of Ge Quantum Dots - Mn-Interaction with the Ge QD{105} Facet and the Wetting Layer

C. A. Nolph. J. K. Kassim, J. A. Floro, P. Reinke

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scan…

cond-mat.mtrl-sci2011

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Christopher W. Petz, Dongyue Yang, Jeremy Levy +1

Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic…

cond-mat.mtrl-sci2011★ 6 cited

Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots

Christopher W. Petz, Jerrold A. Floro

Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differen…