1 citations · 1 across the 2 of their papers we have counts for
3 papers
3D Nanostructures on Ge/Si(100) Wetting Layers: Hillocks and Pre-Quantum Dots
Gopalakrishnan Ramalingam, Jerrold A. Floro, Petra Reinke
The annealing of sub-critical Ge wetting layers (WL<3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus dir…
Surface Driven Mn-Doping of Ge Quantum Dots - Mn-Interaction with the Ge QD{105} Facet and the Wetting Layer
C. A. Nolph. J. K. Kassim, J. A. Floro, P. Reinke
The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scan…
Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates
Christopher W. Petz, Dongyue Yang, Jeremy Levy +1
Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic…