58 citations · 177 across the 7 of their papers we have counts for
7 papers
Quantum Monte Carlo study of Doppler broadening of positron annihilation radiation in semiconductors and insulators
Kristoffer Simula, Jan Härkönen, Iuliia Zhelezova +3
Positron annihilation in solid state matter can be utilized to detect and identify open-volume defects. The momentum distribution of the annihilation radiation is an important obse…
Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in -GaO
Antti Karjalainen, Vera Prozheeva, Kristoffer Simula +4
We report a systematic first principles study on positron annihilation parameters in the -GaO lattice and Ga mono-vacancy defects complemented with orientation-dependent…
Understanding and Control of Bipolar Doping in Copper Nitride
Angela N Fioretti, Craig P Schwartz, John Vinson +10
Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semicon…
Defect evolution and interplay in n-type InN
Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente +5
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron an…
Si nanoparticle interfaces in Si/SiO2 solar cell materials
S. Kilpelainen, Y. -W. Lu, F. Tuomisto +2
Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode, and photolu…
In vacancies in InN grown by plasma-assisted molecular beam epitaxy
Floris Reurings, Filip Tuomisto, Chad S. Gallinat +2
The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted…