129 citations · 912 across the 25 of their papers we have counts for
5 papers · 1 filter
Bandstructure and mobility variations in p-type Silicon nanowires under electrostatic gate field
Neophytos Neophytou, Oskar Baumgartner, Zlatan Stanojevic +1
The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation of Si nanowires (NWs), self consistently coupled to a 2D Poisson…
Optimizing Thermoelectric Power Factor by Means of a Potential Barrier
Neophytos Neophytou, Hans Kosina
Large efforts in improving thermoelectric energy conversion are devoted to energy filtering by nanometer size potential barriers. In this work we perform an analysis and optimizati…
On the interplay between electrical conductivity and Seebeck coefficient in ultra-narrow silicon nanowires
Neophytos Neophytou, Hans Kosina
We analyze the effect of low dimensionality on the electrical conductivity (σ) and Seebeck coefficient (S) in ultra-narrow Si nanowires (NWs) by employing atomistic considerations…
Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation
Hossein Karamitaheri, Neophytos Neophytou, Hans Kosina
We investigate the effect of confinement and orientation on the phonon transport properties of ultra-thin silicon layers of thicknesses between 1 nm-16 nm. We employ the modified v…
Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires using the Valence Force Field Method
Hossein Karamitaheri, Neophytos Neophytou, Mohsen Karami Taheri +2
We study the effect of confinement on the phonon properties of ultra-narrow silicon nanowires of side sizes of 1-10nm . We use the modified valence force field method to compute th…