129 citations · 912 across the 25 of their papers we have counts for
12 papers · 1 filter
On the Lorenz number of multi-band materials
Mischa Thesberg, Hans Kosina, Neophytos Neophytou
There are many exotic scenarios where the Lorenz number of the Wiedemann-Franz law is known to deviate from expected values. However, in conventional semiconductor systems, it is a…
On the effectiveness of the thermoelectric energy filtering mechanism in low-dimensional superlattices and nano-composites
Mischa Thesberg, Hans Kosina, Neophytos Neophytou
Electron energy filtering has been suggested as a promising way to improve the power factor and enhance the ZT figure of merit of thermoelectric materials. In this work we explore…
Low-dimensional phonon transport effects in ultra-narrow, disordered graphene nanoribbons
Hossein Karamitaheri, Mahdi Pourfath, Hans Kosina +1
We investigate the influence of low-dimensionality and disorder in phonon transport in ultra-narrow armchair graphene nanoribbons (GNRs) using non-equilibrium Greens function (NEGF…
Anomalous diameter dependence of thermal transport in ultra-narrow Si nanowires
Hossein Karamitaheri, Neophytos Neophytou, Hans Kosina
We present atomistic valence force field calculations of thermal transport in Si nanowires of diameters from 12nm down to 1nm. We show that as the diameter is reduced, the phonon d…
Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation
Hossein Karamitaheri, Neophytos Neophytou, Hans Kosina
We investigate the effect of confinement and orientation on the phonon transport properties of ultra-thin silicon layers of thicknesses between 1 nm-16 nm. We employ the modified v…
Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires using the Valence Force Field Method
Hossein Karamitaheri, Neophytos Neophytou, Mohsen Karami Taheri +2
We study the effect of confinement on the phonon properties of ultra-narrow silicon nanowires of side sizes of 1-10nm . We use the modified valence force field method to compute th…
Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires
Neophytos Neophytou, Hans Kosina
It is suggested that low dimensionality can improve the thermoelectric (TE) power factor of a device, offering an enhancement of the ZT figure of merit. In this work the atomistic…
Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport
Neophytos Neophytou, Hans Kosina
As a result of suppressed phonon conduction, large improvements of the thermoelectric figure of merit, ZT, have been recently reported for nanostructures compared to the raw materi…
Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis
Neophytos Neophytou, Gerhard Klimeck, Hans Kosina
Ultra-thin-body (UTB) channel materials of a few nanometers in thickness are currently considered as candidates for future electronic, thermoelectric, and optoelectronic applicatio…
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: An atomistic analysis
Neophytos Neophytou, Hans Kosina
The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm, in [100], [110], and [111] transport orientations is calculated. An atomistic tight-binding model is us…
Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model
Neophytos Neophytou, Martin Wagner, Hans Kosina +1
Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and t…
On the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias
Neophytos Neophytou, Sung Geun Kim, Gerhard Klimeck +1
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretic…