2 papers
cond-mat.mtrl-sci2022
Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy
H. Y. Zhang, Y. H. Chen, Z. G. Wang
As a system with both profound physics and promising application potentials, the strain-induced self-assembled semiconductor nanostructures have been investigated for decades of ye…
cond-mat.mes-hall2011
Influences of Si sheet doping densities on the morphological, conductive and optical characteristics of InAs/GaAs quantum dots
Ke-Fan Wang, X. G. Yang, Y. X. Gu +3
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measure…