2 papers
cond-mat.mes-hall2013
Effects of n-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells
Yong-Xian Gu, Xiao-Guang Yang, Hai-Ming Ji +2
We investigated the current-voltage characteristic of InAs/GaAs quantum dot intermediate band solar cells (QD IBSCs) with different n-type doping density in the QD layer. The n-typ…
cond-mat.mes-hall2011
Influences of Si sheet doping densities on the morphological, conductive and optical characteristics of InAs/GaAs quantum dots
Ke-Fan Wang, X. G. Yang, Y. X. Gu +3
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measure…