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20112021
most citedPossible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

19 citations · 31 across the 6 of their papers we have counts for

collaborators

6 papers

nlin.CD2021

Theoretical and Experimental Investigation into the Branched Flow Phenomenon of Light

Han Lin, Xiaoyue Ma, Kefan Wang

Branched flow can be observed when a laser beam is coupled into a soap film. This research theoretically explored the phenomenon through analogy between light wave and particles in…

cond-mat.mtrl-sci2021

Atomic structure, electronic structure and optical absorption of inorganic perovskite compounds Cs2SnI6-nXn (X=F, Cl, Br; n= 0~6): A first-principles study

Wang Xuan, Tang Yehua, Nairui Xiao +1

As a possible alternative to organic-inorganic hybrid perovskite halide, inorganic Cs2SnI6 has drawn more and more research attention recently. In order to find more Cs2SnI6 deriva…

cond-mat.mtrl-sci2016

Half-filled intermediate bands Si material formed by energetically metastable interstitial sulfur atom

Ke-Fan Wang, Mingguo Liu, Yaping Ma +3

Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughpu…

cond-mat.mtrl-sci2015★ 19 cited

Possible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

Ke-Fan Wang, Hezhu Shao, Kong Liu +3

Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such c…

cond-mat.mtrl-sci2014★ 12 cited

Optical and electrical properties of textured sulfur hyperdoped silicon: a thermal annealing study

Ke-Fan Wang, Shengchun Qu, Yuanxu Wang +1

When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, w…

cond-mat.mes-hall2011

Influences of Si sheet doping densities on the morphological, conductive and optical characteristics of InAs/GaAs quantum dots

Ke-Fan Wang, X. G. Yang, Y. X. Gu +3

The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measure…