2 papers
cond-mat.mtrl-sci2011
Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression
O. I. Velichko, A. A. Hundorina, V. V. Axenov
It has been shown that during thermal treatments of silicon layers preamorphized by germanium implantation and then implanted with boron ions the transport of impurity atoms occurs…
cond-mat.mtrl-sci2011
Change in the microscopic diffusion mechanisms of boron implanted into silicon with increase in the annealing temperature
O. I. Velichko, A. A. Hundorina
A two stream model of boron diffusion in silicon has been developed. The model is intended for simulation of transient enhanced diffusion including redistribution of ion-implanted…