40 citations · 113 across the 5 of their papers we have counts for
5 papers
Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed InGaN layers by scanning X-ray diffraction microscopy
Carsten Richter, Vladimir M. Kaganer, Armelle Even +5
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devi…
Core-shell multi-quantum wells in ZnO / ZnMgO nanowires with high optical efficiency at room temperature
Robin Thierry, Guillaume Perillat-Merceroz, Pierre-Henri Jouneau +2
Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be atta…
Strain relaxation by dislocation glide in ZnO/ZnMgO core-shell nanowires
Guillaume Perillat-Merceroz, Robin Thierry, Pierre-Henri Jouneau +2
Plastic relaxation of the misfit stress in core-shell semi-conducting nanowires can lead to structural defects, detrimental to applications. Core-shell Zn{0.7}Mg{0.3}O/ZnO quantum…
Structural recovery of ion implanted ZnO nanowires
Guillaume Perillat-Merceroz, Fabrice Donatini, Robin Thierry +3
Ion implantation is an interesting method to dope semiconducting materials such as zinc oxide provided that the implantation-induced defects can be subsequently removed. Nitrogen i…
MOCVD growth mechanisms of ZnO nanorods
Guillaume Perillat-Merceroz, Pierre-Henri Jouneau, Guy Feuillet +3
ZnO is a promising material for the fabrication of light emitting devices. One approach to achieve this goal is to use ZnO nanorods because of their expected high crystalline and o…