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20112022
most citedOxidation-assisted graphene heteroepitaxy on copper foil

56 citations · 212 across the 16 of their papers we have counts for

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cond-mat.mtrl-sci2022

Single-Crystal Silicon Thermoelectrics by Phonon Engineering

Thierno-Moussa Bah, Stanislav Didenko, Di Zhou +6

Herein, we report the use of nanostructured crystalline Si as a thermoelectric material and its integration into thermoelectric harvesters. The proof-of-concept relies on the parti…

cond-mat.mtrl-sci2019★ 14 cited

Low work function thin film growth for high efficiency thermionic energy converter: Coupled Kelvin probe and photoemission study of potassium oxide

François Morini, Emmanuel Dubois, Jean-François Robillard +2

Recent researches in thermal energy harvesting have revealed the remarkable efficiency of thermionic energy converters comprising very low work function electrodes. From room tempe…

cond-mat.mtrl-sci2016★ 56 cited

Oxidation-assisted graphene heteroepitaxy on copper foil

Nicolas Reckinger, Xiaohui Tang, Frédéric Joucken +6

We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly take…

cond-mat.mtrl-sci2012★ 12 cited

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Vikram Passi, Ulf Sodervall, Bengt Nilsson +6

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch…

cond-mat.mtrl-sci2011★ 23 cited

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurélien Lecavelier des Etangs-Levallois +9

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stor…

cond-mat.mtrl-sci2011★ 22 cited

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha +8

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantiall…