56 citations · 135 across the 10 of their papers we have counts for
10 papers
Oxidation-assisted graphene heteroepitaxy on copper foil
Nicolas Reckinger, Xiaohui Tang, Frédéric Joucken +6
We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly take…
Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
Xiaohui Tang, Nicolas Reckinger, Olivier Poncelet +5
We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bil…
Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air
Xiaohui Tang, Laurent A. Francis, Constantin Augustin Dutu +2
We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal…
Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories
Xiaohui Tang, Christophe Krzeminski, Aurélien Lecavelier des Etangs-Levallois +9
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stor…
Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha +8
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantiall…
Erbium Silicide Growth in the Presence of Residual Oxygen
Nicolas Reckinger, Xiaohui Tang, Sylvie Godey +6
The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with…