8 papers
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Aditi Raman Moghe, Delphine Lagarde, Sotirios Papadopoulos +11
Heterostructures made from atomically thin semiconductors (here MoSe) and graphene are uniquely poised to investigate photoinduced charge and energy transfer in the 2D limit. H…
Gate-tuneable single-photon emitters in WSe2 monolayer created via AFM nanoindentation on rigid SiO2/Si substrates
Ajit Kumar Dash, Sanket Jugade, Manavendra Pratap Singh +12
Single-photon emitters (SPEs) hosted by two-dimensional (2D) semiconducting materials are envisioned for next-generation quantum applications. However, SPE creation in 2D semicondu…
Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials
Fraunié Jules, Mikhail M. Glazov, Sébastien Roux +13
Boron vacancies () in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity.…
High luminescence efficiency of multi-valley excitonic complexes in heavily doped WSe2 monolayer
Sébastien Roux, Tilly Guyot, Abraao Cefas Torres-Dias +9
Monolayers of group-VI transition-metal dichalcogenides (TMDs) are two-dimensional semiconductors that exhibit exceptionally strong light-matter coupling yet typically suffer from…
Sub 10 nm Nanochannels Enable Directional Quasi Ballistic Exciton Transport over 5 μm at Room Temperature
Xiao-Jie Wang, Jia-Wei Tan, Xiao-Ze Li +9
Nanoscale potential wells provide a powerful means to engineer energy landscapes in low dimensional materials, enabling control over quantum states, carrier dynamics, and optoelect…
Exciton self-trapping in twisted hexagonal boron nitride homostructures
Sébastien Roux, Christophe Arnold, Etienne Carré +17
One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to underst…