54 citations · 183 across the 6 of their papers we have counts for
6 papers
Oxygen vacancy and EC - 1 eV electron trap in ZnO
Gauthier Chicot, Pierre Muret, Julien Pernot +2
Fourier transform deep level transient spectroscopy has been performed between 80 K and 550 K in five n-type ZnO samples grown by different techniques. The capture cross section an…
Core-shell multi-quantum wells in ZnO / ZnMgO nanowires with high optical efficiency at room temperature
Robin Thierry, Guillaume Perillat-Merceroz, Pierre-Henri Jouneau +2
Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be atta…
Strain relaxation by dislocation glide in ZnO/ZnMgO core-shell nanowires
Guillaume Perillat-Merceroz, Robin Thierry, Pierre-Henri Jouneau +2
Plastic relaxation of the misfit stress in core-shell semi-conducting nanowires can lead to structural defects, detrimental to applications. Core-shell Zn{0.7}Mg{0.3}O/ZnO quantum…
Structural recovery of ion implanted ZnO nanowires
Guillaume Perillat-Merceroz, Fabrice Donatini, Robin Thierry +3
Ion implantation is an interesting method to dope semiconducting materials such as zinc oxide provided that the implantation-induced defects can be subsequently removed. Nitrogen i…
Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO
Guillaume Perillat-Merceroz, Patrice Gergaud, Pascal Marotel +3
Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of…
MOCVD growth mechanisms of ZnO nanorods
Guillaume Perillat-Merceroz, Pierre-Henri Jouneau, Guy Feuillet +3
ZnO is a promising material for the fabrication of light emitting devices. One approach to achieve this goal is to use ZnO nanorods because of their expected high crystalline and o…