9 papers
Isolating the natural edges of bilayer graphene in gate-defined mesoscopic devices
Francesco Blanda, Grazia Raciti, Thilo Glatzel +8
We introduce a graphite-gated architecture for bilayer graphene devices in which the active device is completely isolated from the natural graphene edges. Using a single patterned…
Thermal conductivity tuning of scalable nanopatterned silicon membranes measured with a three-probe method
Jose M. Sojo-Gordillo, Alex Rodriguez-Iglesias, Dominik M. Koch +5
Phononic silicon structures have emerged as an integrable and scalable nanosystem for tailoring thermal transport. However, their widespread adoption has been limited by their comp…
Direct observation of strain and confinement shaping the hole subbands of Ge quantum wells
Enrico Della Valle, Arianna Nigro, Miki Bonacci +6
Germanium-silicon-germanium (Ge/SiGe) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where st…
Quantifying Strain and its Effect on Charge Transport in Ge/Si Core/Shell Nanowires
Aswathi K. Sivan, Nicolas Forrer, Aakash Shandilya +12
Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the…
Low-loss frequency-tunable Josephson junction array cavities on Ge/SiGe heterostructures with a tapered etching approach
Franco De Palma, Elena Acinapura, Wonjin Jang +5
Ge/SiGe heterostructures represent a promising platform for hosting various quantum devices such as hole spin qubits and Andreev spin qubits. However, the compatibility of such het…
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth HydrogennImplantation
Nadine Denis, Akant Sharma, Elena Blundo +9
Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achiev…