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cond-mat.mes-hall2012
The VOI-Based Valleytronics
G. Y. Wu, N. -Y. Lue, Y. -C. Chen
We discuss the valley-orbit interaction (VOI) and the concept of VOI based valleytronics. Potential of such valleytronics is illustrated, with graphene as an example material, in s…
cond-mat.mes-hall2012★ 1 cited
Valley-based FETs in graphene
M. -K. Lee, N. -Y. Lue, Y. -C. Chen +2
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of…