55 citations · 107 across the 3 of their papers we have counts for
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Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
Christophe Krzeminski, Quentin Brulin, V. Cuny +3
The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is construc…
Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation
Christophe Krzeminski, Evelyne Lampin
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoele…
Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment
Christophe Krzeminski, Guilhem Larrieu, Julien Penaud +2
Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes c…