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cond-mat.mtrl-sci2026
Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy
Hossein Zandipour, Felix Kaps, Robin Buschbeck +19
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant conc…
cond-mat.mtrl-sci2026
Tailoring phonon-driven responses in α-MoO3 through isotopic enrichment
Thiago S. Arnaud, Ryan W. Spangler, Johnathan D. Georgaras +29
The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material is…