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20092026
most citedFermi level influence on the adsorption at semiconductor surfaces - ab initio simulations

44 citations · 353 across the 33 of their papers we have counts for

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cond-mat.mtrl-sci2014★ 28 cited

Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data

Pawel Kempisty, Stanislaw Krukowski

Adsorption of ammonia at NH3/NH2/H covered GaN(0001) surface was analyzed using results of ab initio calculations. The whole configuration space of partially NH3/NH2/H covered GaN(…