2 papers
cond-mat.mtrl-sci2026
Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles
Renhao Xue, Ruizhan Yan, Mansun Chan +1
A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental…
cond-mat.mtrl-sci2025
Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
Soumya Sarkar, Xiwen Liu, Deep Jariwala
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes…