Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles

Renhao Xue, Ruizhan Yan, Mansun Chan +1

A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental…