most citedDielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks

12 citations · 12 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2011★ 12 cited

Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks

M. Shahinur Rahman, E . K. Evangelou

In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have bee…