24 citations · 36 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2012★ 24 cited
Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates
Md. Shahinur Rahman, Evangelos K. Evangelou, Nikos Konofaos +1
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrat…
cond-mat.mtrl-sci2011★ 12 cited
Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks
M. Shahinur Rahman, E . K. Evangelou
In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have bee…