2 papers
cond-mat.mtrl-sci2026
Device-area selection of memristive transport regimes in epitaxial -based ferroelectric devices
Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo +5
Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-m…
cond-mat.mes-hall2024
On the origin of filamentary resistive switching in oxides-based memristive devices
R. Leal Martir, E. A. Jagla, D. Rubi +1
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. Howev…