5 papers
Device-area selection of memristive transport regimes in epitaxial -based ferroelectric devices
Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo +5
Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-m…
Disentangling the ferroelectric phases of epitaxial hafnia
Johanna van Gent Gonzalez, Ewout van der Veer, Yulei Li +2
Since its discovery, ferroelectric hafnia has been extensively studied due to its CMOS-compatibility and ability to remain polarized at sub-10 nm thicknesses. The ferroelectric beh…
Polarity and anti-distortive polarons in WO3 through epitaxial shear strain
Ewout van der Veer, Martin F. Sarott, Jack T. Eckstein +11
Bestowing CMOS-compatible binary oxides with additional functionalities is a powerful strategy toward the realization of oxide electronics. Ideal candidates are thin films which di…
Integration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon
Jingtian Zhao, Beatriz Noheda, Martin F. Sarott
Highly-crystalline ferroelectric oxides integrated on Si hold great promise for energy-efficient memory and logic technologies. Exploiting epitaxial strain engineering in these mat…
Oxygen vacancy engineering in pulsed laser deposited BaSnO thin films on SrTiO
Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda +1
We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn, BSO) thin films by precisely controlling the background oxygen pr…