most citedProperties and characterization of ALD grown dielectric oxides for MIS structures

4 citations · 4 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2011★ 4 cited

Properties and characterization of ALD grown dielectric oxides for MIS structures

S. Gieraltowska, D. Sztenkiel, E. Guziewicz +7

We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate t…