16 citations · 32 across the 4 of their papers we have counts for
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Properties and characterization of ALD grown dielectric oxides for MIS structures
S. Gieraltowska, D. Sztenkiel, E. Guziewicz +7
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate t…
Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition - uniformity of Co distribution, structural, optical, electrical and magnetic properties
Malgorzata I. Lukasiewicz, Bartlomiej Witkowski, Marek Godlewski +6
In the present study we report on properties of ZnCoO films grown at relatively low temperature by the Atomic Layer Deposition, using two reactive organic zinc precursors (dimethyl…
ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution
M. I. Lukasiewicz, B. Witkowski, M. Godlewski +8
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and coba…
Role of interface in ferromagnetism of (Zn,Co)O films
M. Godlewski, E. Guziewicz, M. I. Lukasiewicz +7
We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the Atomic layer Deposition (ALD) method is due to Co metal accumulat…