activity
20242026
most citedA CN complex as an alternative to the T center in Si

5 citations · 6 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2025

Charge state equilibration of nitrogen-vacancy center ensembles in diamond: The role of electron tunneling

Audrius Alkauskas, Chris G. Van de Walle, Lukas Razinkovas +1

The charge state stability of nitrogen-vacancy (NV) centers critically affects their application as quantum sensors and qubits. Understanding charge state conversion and equilibrat…

cond-mat.mtrl-sci20251 cited

Resonant states and nuclear dynamics in solid-state systems: the case of silicon-hydrogen bond dissociation

Woncheol Lee, Mark E. Turiansky, Dominic Waldhör +3

Bond breaking in the presence of highly energetic carriers is central to many important phenomena in physics and chemistry, including radiation damage, hot-carrier degradation, act…

cond-mat.mtrl-sci20255 cited

A CN complex as an alternative to the T center in Si

J. K. Nangoi, M. E. Turiansky, C. G. Van de Walle

We present a first-principles study of a carbon-nitrogen (CN) impurity complex in silicon as an isoelectronic alternative to the T center [(CCH)]. The latter has been…

cond-mat.mtrl-sci2025

Design of high-mobility p-type GaN via the piezomobility tensor

Jie-Cheng Chen, Joshua Leveillee, Chris G. Van de Walle +1

Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An import…

cond-mat.mtrl-sci2024

Heterostructure Engineering for Wurtzite LaN

Andrew J. E. Rowberg, Sai Mu, Chris G. Van de Walle

Wurtzite LaN (wz-LaN) is a semiconducting nitride with favorable piezoelectric and ferroelectric properties, making it promising for applications in electronics. We use first-princ…