most citedFabrication of Ultrathin Single-Crystal Diamond Membranes

155 citations · 362 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2016100 cited

Characterization of Three-Dimensional Microstructures in Single Crystal Diamond

P. Olivero, S. Rubanov, P. Reichart +8

We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off…

cond-mat.mtrl-sci2016155 cited

Fabrication of Ultrathin Single-Crystal Diamond Membranes

B. A. Fairchild, P. Olivero, S. Rubanov +9

We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a signi…

cond-mat.mtrl-sci201625 cited

Structural transformation of implanted diamond layers during high temperature annealing

S. Rubanov, B. A. Fairchild, A. Suvorova +2

In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to for…

cond-mat.mtrl-sci201623 cited

Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond

F. Picollo, S. Rubanov, C. Tomba +8

We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of…

cond-mat.mes-hall201026 cited

Superconducting transition in Nb nanowires fabricated using focused ion beam

G. C. Tettamanzi, C. I. Pakes, A. Potenza +3

Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined i…

cond-mat.mtrl-sci201033 cited

Nano-Raman spectroscopy of silicon surfaces

P. G. Spizzirri, J. -H. Fang, S. Rubanov +2

Near-field enhanced, nano-Raman spectroscopy has been successfully used to probe the surface chemistry of silicon prepared using standard wafer cleaning and processing techniques.…