activity
20102015
most citedThermal infrared emission reveals the Dirac point movement in biased graphene

290 citations · 567 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2015

Exceptional and Anisotropic Transport Properties of Photocarriers in Black Phosphorus

Jiaqi He, Dawei He, Yongsheng Wang +4

We show that black phosphorus has room-temperature charge mobilities on the order of 10 cmVs, which are about one order of magnitude larger than silicon. We a…

cond-mat.mes-hall201420 cited

Graphene Side Gate Engineering

Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu +1

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical t…

cond-mat.mes-hall2012256 cited

Ultrafast and spatially resolved studies of charge carriers in atomically-thin molybdenum disulfide

Rui Wang, Brian A. Ruzicka, Nardeep Kumar +3

Atomically-thin molybdenum disulfide is emerging as a new nanomaterial with potential applications in the fields of electronic and photonics. Charge carrier dynamics plays an essen…

cond-mat.mes-hall2010290 cited

Thermal infrared emission reveals the Dirac point movement in biased graphene

Marcus Freitag, Hsin-Ying Chiu, Mathias Steiner +2

Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point…

cond-mat.mtrl-sci20101 cited

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins +4

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gat…