most citedBoron-related defects in n-type 4H-SiC Schottky barrier diodes

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cond-mat.mtrl-sci2023★ 7 cited

Boron-related defects in n-type 4H-SiC Schottky barrier diodes

Tihomir Knežević, Eva Jelavić, Yuichi Yamazaki +3

We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy…