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physics.app-ph2023
Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors
Zhao-Yi Yan, Zhan Hou, Kan-Hao Xue +16
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can…
physics.app-ph2021★ 17 cited
Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
M. H. Shao, H. F. Liu, R. He +13
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applica…