14 citations · 29 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2019★ 2 cited
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
L. Persichetti, M. Fanfoni, B. Bonanni +5
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…
cond-mat.mtrl-sci2019★ 13 cited
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
L. Persichetti, L. Di Gaspare, F. Fabbri +7
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition…
cond-mat.mes-hall2010★ 14 cited
Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface
L. Persichetti, A. Sgarlata, M. Fanfoni +1
We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10…