The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

J. Smalc-Koziorowska, J. Moneta, G. Muziol +5

(a+c) dislocations in hexagonal materials are typically observed to be dissociated into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconduct…