Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5

1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…