5 citations · 7 across the 5 of their papers we have counts for
5 papers
Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
Nadim Chowdhury, Imtiaz Ahmed, Zubair Al Azim +3
We propose a physically based analytical compact model to calculate Eigen energies and Wave functions which incorporates penetration effect. The model is applicable for a quantum w…
Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam +3
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Me…
A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET
Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed +3
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold V…
In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current
Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed +3
In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consisten…