most citedOn the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias

35 citations · 35 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2010★ 35 cited

On the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias

Neophytos Neophytou, Sung Geun Kim, Gerhard Klimeck +1

A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretic…