1 citations · 1 across the 3 of their papers we have counts for
3 papers
physics.app-ph2023
Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors
Zhao-Yi Yan, Zhan Hou, Kan-Hao Xue +16
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can…
cond-mat.mtrl-sci2023★ 1 cited
An efficient model algorithm for two-dimensional field-effect transistors
Zhao-Yi Yan, Zhan Hou, Fan Wu +9
Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forwar…
cond-mat.str-el2010
A Local Mott Transition in NiO Resistance Random Access Memory
Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska +1
The physics of the Mott transition in the anodic region of NiO Resistance Random Access Memory (RRAM) is discussed from the Hubbard model. The Hubbard approximation is examined in…