Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin Film Transistors

Chankeun Yoon, Juhan Ahn, Yuchen Zhou +2

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of su…