most citedFerroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories

11 citations · 11 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2023★ 11 cited

Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories

Mohamed Belmoubarik, Muftah Al-Mahdawi, George Machado +4

Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage.…