10 citations · 11 across the 2 of their papers we have counts for
2 papers
physics.app-ph2023★ 10 cited
Multibridge VO2-Based Resistive Switching Devices in a Two-Terminal Configuration
Xing Gao, Thijs J. Roskamp, Timm Swoboda +4
Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually,…
cond-mat.str-el2023★ 1 cited
Near-field imaging of domain switching in in-operando VO devices
Sergio Salvía Fernández, Xing Gao, Silvia Cassanelli +3
Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structu…