Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels

Sushmita Saha, Deepak Sain, Alestin Mawrie

We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Ra…