Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi${}_2$N${}_4$/HfSi${}_2$N${}_4$/NbSi${}_2$N${}_4$ lateral heterojunction diode

P. Bodewei, E. Şaşıoğlu, N. F. Hinsche +1

Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transi…