2 papers
cond-mat.mtrl-sci2010
A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance
Raghvendra S. Saxena, M. Jagadesh Kumar
In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gate…
cond-mat.mtrl-sci2010
A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis
Raghvendra S. Saxena, M. Jagadesh Kumar
In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in…