1 citations · 2 across the 3 of their papers we have counts for
3 papers
Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures
L. K. Alexander, N. Suwuntanasarn, W. D. Hutchison
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly…
Pulsed ESR Measurement of Coherence Times in Si:P at Very Low Temperatures
W. D. Hutchison, L. K. Alexander, N. Suwuntanasarn +1
A purpose built millikelvin pulsed x-band ESR system is used to measure spin decoherence times of phosphorus donor spins in 99.92% isotopically pure 28 silicon. The isolated P spin…
ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface
Paul G. Spizzirri, Wayne D. Hutchison, Nikolas Stavrias +4
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity…