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physics.ins-det2015★ 11 cited
Processing and characterization of epitaxial GaAs radiation detectors
X. Wu, T. Peltola, T. Arsenovich +12
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were proc…
physics.ins-det2010★ 7 cited
Czochralski Silicon as a Detector Material for S-LHC Tracker Volumes
Leonard Spiegel, Tobias Barvich, Burt Betchart +21
With an expected ten-fold increase in luminosity in S-LHC, the radiation environment in the tracker volumes will be considerably harsher for silicon-based detectors than the alread…