3 papers
cond-mat.mtrl-sci2026
Velocity-field characteristics and device performance in nanoscale amorphous oxide Thin-Film-Transistors
Chankeun Yoon, Xiao Wang, Jatin Vikram Singh +2
The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental d…
physics.app-ph2025
Engineering Cryogenic FETs: Addressing SCEs and Impact of Interface Traps Down to 2 K Temperature
Nilesh Pandey, Dipanjan Basu, Sanjay K. Banerjee
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effec…
cond-mat.mes-hall2025
Three-Dimensional Electrostatic and Quantum-Confinement Modeling of Silicon Nanowire Double Quantum Dots
Nilesh Pandey, Dipanjan Basu, Leonard F Register +1
We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D an…