4 citations · 8 across the 3 of their papers we have counts for
3 papers
physics.plasm-ph2010★ 3 cited
Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC
B. K. Daas, K. M. Daniels, T. S. Sudarshan +1
We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thicknes…
physics.chem-ph2010★ 4 cited
Graphene to Graphane: Novel Electrochemical Conversion
Kevin M. Daniels, B. Daas, R. Zhang +6
A novel electrochemical means to generate atomic hydrogen, simplifying the synthesis and controllability of graphane formation on graphene is presented. High quality, vacuum grown…
cond-mat.mtrl-sci2010★ 1 cited
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…