7 papers
High-Performance Near-Infrared Quantum Emission from Color Centers in hBN
Sean Doan, Sahil D. Patel, Yilin Chen +9
Color centers hosted in hexagonal boron nitride have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communicatio…
Clarification of the Spontaneous Polarization Direction in Crystals with Wurtzite Structure
Simon Fichtner, Mohamed Yassine, Chris van de Walle +1
The wurtzite structure is one of the most frequently found crystal structures in modern semiconductors and its inherent spontaneous polarization is a defining materials property. D…
Carbon in GaN as a nonradiative recombination center
Fangzhou Zhao, Hongyi Guan, Mark E. Turiansky +1
Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon () has been suggested to be a n…
Characterization of Chromium Impurities in -GaO
Mark E. Turiansky, Sai Mu, Lukas Razinkovas +8
Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr…
First-principles theory of direct-gap optical emission in hexagonal Ge and its enhancement via strain engineering
Christopher A. Broderick, Xie Zhang, Mark E. Turiansky +1
The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretica…
Towards higher electro-optic response in AlScN
Haochen Wang, Sai Mu, Chris G. Van de Walle
Novel materials with large electro-optic (EO) coefficients are essential for developing ultra-compact broadband modulators and enabling effective quantum transduction. Compared to…