2 papers
cond-mat.mes-hall2026
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
cond-mat.mes-hall2025
High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…