ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications

Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12

Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…